| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element capable of improving sensitivity and reducing pixels and a method for manufacturing the image pickup element. SOLUTION: A first conductivity type semiconductor area 21 is formed so that at least a semiconductor substrate 2 can be included at the upper part of an overflow barrier area 3 inside the semiconductor substrate 2, and a charge storage area 6 is formed at the position corresponding to the first conductivity type semiconductor area 21 of a light receiving sensor 5 in an epitaxial layer 4 on the semiconductor substrate 2 so that a solid image pickup element 1 can be constituted. Also, the overflow barrier area 3 is formed inside the semiconductor substrate 2, the first conductivity type semiconductor area 21 is formed on the surface of the semiconductor substrate 2, the epitaxial layer 4 is formed on the semiconductor substrate 2, and the charge storage area 6 is formed at the position corresponding to the first conductivity type semiconductor area 21 at the surface side of the epitaxial layer 4 so that the solid image pickup element 1 can be manufactured.
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