SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of obtaining a silicon oxide film, which is high enough in reliability to be used as a gate insulating film, at a low temperature. SOLUTION: When a silicon oxide film is formed through a plasma CVD method using organic silane (e.g. TEOS) with an ethoxy group and oxygen as materials so as to cover an island-like non-single crystal silicon region, it is preferable that 0.01 to 1 mol% of hydrocarbon (e.g. trichloroethylene) containing hydrogen chloride or chlorine or a fluorine-containing gas is mixed into an atmosphere, by which an obtained silicon oxide film is lessened in alkali metal content and improved in reliability.