| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate transistor in which the diffusion of boron from the gate electrode of a surface channel PMOS to the gate insulating film can be reduced, and the adverse influence of the deterioration of the mobility of a transistor or the increase in a fixed charge on device characteristics can be prevented from being generated, even under a situation that the refining of the transistor is developed and the gate insulating film is thinned, and to provide a method for manufacturing the transistor. SOLUTION: A gate insulating film 105 and a gate electrode 107 are successively formed on a substrate 101. A process to form the gate insulating film 105 comprises oxide film forming process (a) for forming a silicon oxide film 105, reducing process (a-1) for reducing a surface part 105a of the silicon oxide film 105 in a reducing atmosphere, and nitriding process (b-1) to introduce nitride from surface 105s side into the silicon oxide film 105.
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