| 摘要 |
A semiconductor device comprising: a first wiring layer formed on a semiconductor substrate with an insulation film interposed therebetween, an interlayer insulation film and a second wiring layer formed on the first wiring layer in this order, wherein the interlayer insulation film is composed, from a first wiring layer side, of a first silicon oxide film having a compressive stress within the film, a silicon nitride film having a compressive stress within the film, a second silicon oxide film having a tensile stress within the film, and a third silicon oxide film having a compressive stress within the film.
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