| 摘要 |
<p>A method for producing a semiconductor wafer in which flatness is enhanced by effectively reducing the irregularity having wavelength of 0.5 mm or above left on the surface of the semiconductor wafer after finishing the primary polishing step, and a semiconductor wafer produced by that method. The production method comprises polishing step including a primary polishing step and a finish polishing step and is characterized by further comprising a correction polishing step, after the primary polishing step, using a polishing cloth harder than that used in the primary polishing process step.</p> |
