| 摘要 |
A photo sensor array comprises a plurality of photoelectric conversion elements separated from each other in a predetermined direction to be arranged, each photo conversion element including a semiconductor layer having an incidence effective region on which excited light is incident, source-drain electrodes provided respectively on both ends of the semiconductor layer, a first gate electrode provided below the semiconductor layer via the first gate insulating film. A second gate electrode provided above the semiconductor layer via the second gate insulating film. A source terminal commonly connects to the source electrodes of the photoelectric conversion elements, and a drain terminal commonly connects the drain electrodes of the photoelectric conversion elements, a first gate terminal commonly connects the first gate electrodes of the photoelectric conversion elements, and a second gate terminal commonly connects the second gate terminal of the photoelectric conversion elements.
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