| 发明名称 |
Group III-V compound semiconductor and method of producing the same |
| 摘要 |
Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.
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| 申请公布号 |
US2001031385(A1) |
申请公布日期 |
2001.10.18 |
| 申请号 |
US20010814875 |
申请日期 |
2001.03.23 |
| 申请人 |
HIRAMATSU KAZUMASA;MIYAKE HIDETO;MAEDA TAKAYOSHI;IYECHIKA YASUSHI |
发明人 |
HIRAMATSU KAZUMASA;MIYAKE HIDETO;MAEDA TAKAYOSHI;IYECHIKA YASUSHI |
| 分类号 |
H01L21/18;C30B23/02;C30B25/02;H01L21/20;H01L33/00;(IPC1-7):B32B9/00 |
主分类号 |
H01L21/18 |
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