| 摘要 |
The method for making a virtual phase charge coupled device with multi-directional charge transfer capabilities includes: forming a semiconductor region 48 of a first conductivity type; forming first gate regions 32 and 36 overlying and separated from the semiconductor region 48; forming second gate regions 34 and 38 adjacent to the first gate regions 32 and 36 and electrically separated from the first gate regions 32 and 36; forming virtual gate regions 24, 26, and 28 of a second conductivity type in the semiconductor region 48 and aligned to the gate regions 32, 34, 36, and 38.
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