VAPOR PHASE GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase growth method which can reliably and simply remove a deposit on an inner surface of an exhaust pipe without disassembling the pipe for high efficiency and stability. SOLUTION: By introducing a silane chloride into a reaction container 1 of a vapor phase growth facility 100, a silicon layer is grown on a substrate by vapor phase growth. An exhaust gas is discharged from the container 1 via an exhaust pipe 19. Under a condition that the pipe 19 is connected to the container 1, a washing gas containing chlorine trifluoride is circulated into the pipe 19 to remove oily silane deposited thereon.