| 摘要 |
PROBLEM TO BE SOLVED: To increase throughput in a method for removing natural oxide film existing in the contact hole of a semiconductor device by a reaction gas that is excited by microwaves. SOLUTION: A plurality of semiconductor silicon wafers 10, that are continuously maintained at 343 K or less and at the same time, are aligned in the vertical direction are rotated. At the same time, the reaction gas is substantially introduced into a reaction chamber 20 in a horizontal direction via chambers 5 and 22 that are extended in the vertical direction along the reaction chamber 20, and at the same time, have a higher internal pressure than that of the reaction chamber. After that, the semiconductor wafer 10 is heated (30) to 373 K or higher.
|
