SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND LIQUID-CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem where the width of an LDD cannot be measured after completion of a thin-film transistor, so far. SOLUTION: There are provided an LDD corresponding region 6d which corresponds to an LDD structure of a thin-film transistor, a P heavy doping region 6e which is positioned in the region adjacent to the LDD corresponding region 6d and has a nature of an n-type semiconductor different from the LDD corresponding region 6d, a non-doping region 6c which is positioned in the region adjacent to the LDD corresponding region 6d and has a nature of an intrinsic semiconductor, and first and second electrode terminals 20a and 20b which are provided at both short-side edge parts of the LDD corresponding region 6d and electrically connect to the LDD corresponding region 6d. The deviation amount of the LDD structure of thin-film transistor from the design value of LDD length is practically agreed with that of LDD corresponding region 6d from the design value for width.