发明名称 Single-substrate-heat-processing apparatus for semiconductor process
摘要 A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.
申请公布号 US2001027970(A1) 申请公布日期 2001.10.11
申请号 US20010824018 申请日期 2001.04.03
申请人 LI YICHENG;TAKAGI TOSHIO 发明人 LI YICHENG;TAKAGI TOSHIO
分类号 C23C16/46;H01L21/00;H01L21/205;H01L21/22;H01L21/26;(IPC1-7):F27D11/00 主分类号 C23C16/46
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