发明名称 SYNCHRONOUS FLASH MEMORY
摘要 A computer system comprises a memory controller and a synchronous non-volatile memory device coupled to the memory controller via a main memory bus. The synchronous non-volatile memory device has external interconnects arranged in a manner that corresponds to interconnects of a synchronous dynamic random access memory device. The synchronous dynamic random access memory device. The synchronous flash memory device, however, comprises a reset connection, and a Vccp power supply connection correspond to first and second no-connect (NC) interconnect pins of the synchronous dynamic random access memory. In one embodiment, the synchronous non-volatile memory device has a command interface comprising a write enable connection (WE#) to receive a write enable signal, a column address strobe connection (CAS#) to receive a write enable signal, a column address strobe connection (RAS#) to receive a row address strobe signal, and a chip select connection (CS#) to receive a chip select signal.
申请公布号 WO0175897(A2) 申请公布日期 2001.10.11
申请号 WO2001US10372 申请日期 2001.03.30
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR, FRANKIE, F.
分类号 G11C16/02;G06F12/00;G06F12/02;G06F13/16;G06F13/42;G11C7/10;G11C8/18;G11C16/06;G11C16/10;G11C16/26;(IPC1-7):G11C11/00 主分类号 G11C16/02
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