Method of fabricating semiconductor device having memory capacitor including ferroelectric layer made of composite metal oxide

摘要

In a method and an apparatus for manufacturing a semiconductor device which has a capacitor consisting of a layered structure of a lower electrode, a ferroelectric layer made of a composite metal oxide such as PZT and an upper electrode in a predetermined region on a semiconductor substrate, the lower electrode, the ferroelectric layer and the upper electrode are successively formed in an atmosphere isolated from the air. For the duration after forming the ferroelectric layer till starting the formation of the upper electrode, it is desirable to introduce a gas such as an inert gas or an inert gas with oxygen into the atmosphere in the vicinity of the substrate to keep the atmosphere within a predetermined pressure range.