发明名称 THIN FILM PHOTOELECTRIC CONVERTER
摘要 <p>PROBLEM TO BE SOLVED: To provide a thin film photoelectric converter capable of improving conversion efficiency. SOLUTION: A thin film photoelectric converter 1 is provided with a glass substrate 11, a noncrystalline photoelectric converting unit 13, which has thickness of from 0.1 to 0.2μm, formed on the glass substrate 11 and provided with an i-type noncrystalline silicon layer 13i practically composed of a noncrystalline silicon; a transparent conductive layer 21 which is formed on the noncrystalline photoelectric converting unit 13, having a refraction factor different from that of the noncrystalline silicon; and a polycrystal photoelectric converting unit 14 formed on the transparent conductive layer 21, and provided with an i-type polycrystalline silicon layer 4i practically composed of a polycrystal silicon.</p>
申请公布号 JP2001274431(A) 申请公布日期 2001.10.05
申请号 JP20000082600 申请日期 2000.03.23
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 NAKAJIMA AKIHIKO;NAKADA TOSHINOBU
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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