| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor base that has a high-quality epitaxial film where dislocation density is reduced using a mask material such as SiO2 that is used for conventional selective growth, and a growth method. SOLUTION: First, a projection part 11 and a recessed part 12 are provided on the crystal growth surface of a substrate 1. After that, a feed gas for semiconductor crystal growth such as a GaN-family compound semiconductor is supplied to the substrate, and crystal growth is simply carried out from the upper part of the projection part 11, thus forming a first semiconductor layer 2. At this time, lateral direction growth occurs, thus setting the recessed part 12 to a cavity part 13 for remaining. A substance (an anti-surfactant material) for changing a surface state operates on the surface of the first semiconductor layer 2 to fix an anti-surfactant material 3. After that, the feed gas is supplied, a second semiconductor layer 4 that is generated with dot structure made of a semiconductor crystal as a new crystal growth nucleus is used, and the semiconductor base is completed. |
