| 摘要 |
Object of the present invention is to provide a thermal type infrared sensor and a method of manufacturing the same that degree of freedom of a structure is high and cost is low. An infrared ray detecting portion and a support leg are formed above a flat plate-shape void formed inside of a semiconductor substrate, and a processing circuit section of a signal from a detecting portion is fabricated on the semiconductor substrate. Because the structure of the processing circuit section is not influenced by a substrate structure, characteristics is improved. Furthermore, the structure is simplified, and it is possible to reduce a manufacturing cost.
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