发明名称 |
Secondary electron filtering method, defect detection method and device manufacturing method using the same method |
摘要 |
If a conventional mesh filter is used for a voltage contrast measurement on a specimen surface, aberrations that is difficult to correct in a primary electron (PE) beam are generated and then it is difficult to obtain a fine focused beam. An axially symmetric electrode is placed between the secondary electron (SE) detector and the specimen. Through an adjustment for an applied voltage in the electrode, a potential on the optical axis above the specimen is adjusted so that a passage or non-passage of the SEs can be controlled.
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申请公布号 |
US2001025929(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
US20010818226 |
申请日期 |
2001.03.28 |
申请人 |
NAKASUJI MAMORU |
发明人 |
NAKASUJI MAMORU |
分类号 |
G01N23/225;H01J37/05;H01J37/147;H01J37/22;H01J37/244;H01J37/28;H01L21/66;(IPC1-7):G01K1/08;H01J3/14;H01J3/26 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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