发明名称 |
Method for patterning semiconductor devices on a silicon substrate using oxynitride film |
摘要 |
A method for fabricating and patterning semiconductor devices with a resolution down to 0.12 mum on a substrate structure. The method begins by providing a substrate structure comprising various layers of oxide and/or nitride formed over either monocrystalline silicon or polycrystalline silicon. A silicon oxynitride layer is formed on the substrate structure. Key characteristics of the oxynitride layer include: a refractive index of between about 1.85 and 2.35 at a wavelength of 248 nm, an extinction coefficient of between 0.45 and 0.75 at a wavelength of 248 nm, and a thickness of between about 130 Angstroms and 850 Angstroms. A photoresist layer is formed over the silicon oxynitride layer and exposed at a wavelength of between about 245 nm and 250 nm; whereby during exposure at a wavelength of between 245 nm 250 nm, the silicon oxynitride layer provides a phase-cancel effect.
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申请公布号 |
US2001027021(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
US20010865923 |
申请日期 |
2001.05.29 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YAO LIANG-GI;WANG PIN-TING |
分类号 |
G03F1/00;G03F7/09;H01L21/311;H01L21/314;(IPC1-7):H01L21/311;H01L21/302;H01L21/461 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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