Semiconductor device and method of manufacturing the same

摘要

To provide a semiconductor device capable of enhancing crystallinity of a semiconductor of a III-V group compound of a nitride system formed on a sapphire substrate and to provide a method of manufacturing the same. On the sapphire substrate, after forming a seed crystal layer having a crystalline part and an opening part made of a crystal of the semiconductor of the III-V group compound of the nitride system, a concave part communicatively connected to the opening part is formed within the substrate. Then, an n-side contact layer is grown from the crystalline part. Since the lateral grown crystal and the sapphire substrate does not contact, in the n-side contact layer and the crystal of the semiconductor of the III-V group compound of the nitride system grown thereon, density of penetration dislocation restricts lower and a crystal orientation less changes.