发明名称 |
Temperature compensated vertical pin probing device |
摘要 |
An improved vertical pin probing device is constructed using Invar, which substantially matches the coefficient of thermal expansion of the silicon wafer being probed. Spaced dies with Invar foils supporting the probe pins are coated with wear-resistant dielectric materials having lubricity to permit the probe pins to slide in the holes during probing.
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申请公布号 |
US6297657(B1) |
申请公布日期 |
2001.10.02 |
申请号 |
US19990228016 |
申请日期 |
1999.01.11 |
申请人 |
WENTWORTH LABORATORIES, INC. |
发明人 |
THIESSEN WILLIAM F.;MCQUADE FRANCIS T. |
分类号 |
G01R1/073;(IPC1-7):G01R1/073 |
主分类号 |
G01R1/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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