Method for forming gate electrode in semiconductor device capable of preventing distortion of oxidation profile thereof

摘要

The present invention relates to a method for forming a semiconductor device; and, more particularly, to a method for forming a gate electrode capable of preventing distortion of oxidation profile thereof. A method for forming a gate electrode in accordance with the present invention comprises the steps of: forming a conducting layer for a gate electrode on a predetermined semiconductor substrate; forming a silicon layer on sidewalls of the conducting layer through a silicon ion implantation; forming a gate pattern by patterning the conducting layer using the etching barrier pattern for the gate electrode, thereby forming the gate electrode having the silicon layer on sidewalls thereof; and applying a thermal treatment to the semiconductor substrate.