| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon single crystal, capable of increasing the cooling effect on the single crystal, raising the pulling velocity to improve the productivity, having a simple structure and high safety and superior handleability, in a method for producing silicon single crystal by a Czochralski method. SOLUTION: This apparatus for producing silicon single crystal has a radiant heat reflection body which encloses a single crystal while being pulled, has an upper part of a ring-shaped rim and a lower part decreasing in a diameter downward and a radiant heat shied body surrounding the outside of the radiant heat reflection body with laying a heat insulating material between the radiant heat shield body and the radiant heat reflection body. The radiant heat reflection body and the radiant heat shield body are united at least two connection parts and are not in contact with each other except the connection parts.
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