| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing low-temperature polysilicon TFT devices which are formed on the same substrate and kept high in uniformity. SOLUTION: An a-Si film 20a is formed on a substrate and irradiated with a first laser beam L1 at a regular interval, by which polycrystalline parts 20b are formed at a regular interval in the a-Si film 20a. Thereafter, nearly all the surface of the a-Si film 20a is irradiated with a second laser beam L2, by which nearly all the a-Si film 20a is turned polycrystalline for the formation of a polysilicon film 21.
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