| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of forming a gate insulating film so that the shape of the gate insulating film can be prevented from being turned into an overhung shape. SOLUTION: This method for manufacturing a semiconductor device comprises a process for forming island areas 2, 7, and 8, constituted of semiconductor films on a substrate 1, a process for carrying out thermal oxidation of the substrate 1 on which the island regions 2, 7, and 8 are formed in a furnace at 1,100 deg.C, and for forming an insulating film 3 on the surfaces of the island regions 2, 7, and 8, and a process for extracting the substrate 1 from the furnace, after decreasing the temperature inside the furnace to about 850 deg.C or lower.
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