SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To obtain a substrate processing system having a plurality of chambers for processing substrates continuously in which cross contamination is prevented by separating the atmosphere among the substrate processing chambers and the quality of a semiconductor film and the substrate processing capacity are prevented from deteriorating due to mixing of a different gas species with a material gas in the substrate processing chamber. SOLUTION: In the substrate processing system comprising substrate processing chambers 301, 303, and a buffering chamber 302 having an exhaust system 306b independently from the substrate processing chambers, connecting pipes 304a, 304b are provided between the substrate processing chambers and the buffering chamber and the connecting pipe is provided with a gas introduction opening. Since substrate processing gas 308 flows from the connecting pipe into the substrate processing chamber 301 and the buffering chamber 302 and substrate processing gas 309 flows from the connecting pipe into the substrate processing chamber 303 and the buffering chamber 302, the gas moves from the substrate processing chamber to the buffering chamber without opposing a gas flow and the atmosphere can be separated.