| 摘要 |
PROBLEM TO BE SOLVED: To provide a susceptor for epitaxial growth, in which exfoliation of a CVD-SixNy (x=0.1 to 0.9, Y=0.1 to 0.9) film is suppressed and which has improved durability. SOLUTION: A CVD-SiC film 2 having a surface form of a facet-like evenness, an SiC-SixNy (x=0.1 to 0.9, Y=0.1 to 0.9) layer 3 in which fine crystals of SiC and SixNy (x0.1 to 0.9, Y0.1 to 0.9) are present in a mixed state and a CVD-SixNy (x=0.1 to 0.9, Y=0.1 to 0.9) film are laminated in this order on the surface of a carbon substrate 1 on whose surface part an SiC-C layer 1a wherein SiC exists in the scattered state in formed.
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