| 摘要 |
PURPOSE: A flash memory cell is provided to control the quantity of on-current and to increase program speed, by applying a bias voltage to a control gate and a semiconductor substrate to control the threshold voltage of the cell. CONSTITUTION: A tunneling oxide layer(25), a floating gate(26) and a control gate(28) are sequentially formed on a semiconductor substrate(21). A source/drain region(22,23) is formed in the semiconductor substrate at both sides of the floating gate. A ground terminal(201) is connected to the source region. The first power source terminal(202) is connected to the drain region. The second power source terminal(203) is connected to the control gate. The third power source terminal(204) is connected to the semiconductor substrate.
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