发明名称 |
Method of fabricating an opening with deep ultra-violet photoresist |
摘要 |
A method of fabricating an opening with a deep ultra-violet photoresist layer. An insulating layer is formed on a substrate having a device structure. A deep ultra-violet photoresist layer with a first opening is formed on the insulating layer and a hard mask layer is then formed on the surface and the sidewalls of the deep ultra-violet photoresist layer. The first opening is used to pattern the insulating layer to form a second opening within the insulating layer wherein the hard mask layer is to protect the deep ultra-violet photoresist layer. The deep ultra-violet photoresist layer and the hard mask layer are removed to expose the insulating layer and a desired opening is thus accomplished.
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申请公布号 |
US6294314(B2) |
申请公布日期 |
2001.09.25 |
申请号 |
US19980076243 |
申请日期 |
1998.05.11 |
申请人 |
UNITED SILICON INCORPORATED |
发明人 |
LIAO KUAN-YANG |
分类号 |
G03F7/40;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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