METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon bipolar transistor which is made higher in frequency by forming a thin stable base area. SOLUTION: The thin stable base area 17 is formed in such a way that a base area 17 is formed by performing ordinary accelerated energy injection and the whole surface of the area 17 is thermally oxidized. The thickness of the area 17 is controlled by shallow etching utilizing the growth of the oxide film 18.