| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultraviolet(UV) curing process and a tool for forming a film having a low dielectric constant. SOLUTION: The UV curing process and a system used for forming a film having a low dielectric constant are disclosed. Firstly, a carbon-doped silicon film is deposited upon a semiconductor wafer. Then the silicon film is cure by irradiating the film with light energy such as UV energy, etc. In one embodiment, at least 30% of the light energy has a frequency higher than that of visible light. In an appropriate embodiment, the light energy projected upon the wafer does not heat the wafer significantly. This invention also contrives a cluster tool or system which is suitable for the formation and cure of a dielectric film. The cluster tool contains a first chamber coupled with an organosilane source, a second chamber which is constituted to project the light energy upon the wafer received in the second chamber, and a robot section which is suitable for controlling the movement of the waver between the first and second chambers.
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