| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of an SOI structure which has a protection diode which is made larger in ESD breakdown strength. SOLUTION: A protective diode is formed in a p-type silicon layer 13 of an SOI substrate 10. The protection diode has a p-type diffusion layer 14 as an anode layer and a p-type diffusion layer 15 as a cathode layer, which is formed away therefrom at a prescribed distance. An n+-type diffusion layer 16 is formed on the side counterposed to the p-type diffusion layer 14 of the p-type diffusion layer 15. An anode electrode 18 comes into contact with the p-type diffusion layer 14, and a cathode electrode 19 comes into contact at the same time with the p-type diffusion layer 15 and the n+-type diffusion layer 16.
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