发明名称 DEVICE FOR CHARGED PARTICLE BEAN EXPOSURE AND METHOD FOR CHARGED PARTICLE BEAM EXPOSURE
摘要 PROBLEM TO BE SOLVED: To provide a device for charged particle beam exposure and a method for exposure by which lithography accuracy and throughput can be improved by improving the arrangement of opening on a mask and the order of exposure. SOLUTION: A character frequency calculation part divides a circuit pattern to be exposed in a plurality of small areas, and calculates the frequency appearance of a character pattern constituting the details of the circuit pattern for every small area. A part for determining the arrangement of character opening calculates a frequency when optional two character patterns are combined in the same small area throughout the circuit pattern, and determines the arrangement of character opening on a mask so that openings of character pattern having a high combination frequency may be mutually close to each other. A deflection order setting part determines an order for using a character opening for every small area so that a distance between the character openings on a mask to be used may become shortest.
申请公布号 JP2001257145(A) 申请公布日期 2001.09.21
申请号 JP20000065377 申请日期 2000.03.09
申请人 TOSHIBA CORP 发明人 UMAGOE TOSHIYUKI;INENAMI RYOICHI
分类号 G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
代理机构 代理人
主权项
地址