发明名称 |
DEVICE FOR CHARGED PARTICLE BEAN EXPOSURE AND METHOD FOR CHARGED PARTICLE BEAM EXPOSURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a device for charged particle beam exposure and a method for exposure by which lithography accuracy and throughput can be improved by improving the arrangement of opening on a mask and the order of exposure. SOLUTION: A character frequency calculation part divides a circuit pattern to be exposed in a plurality of small areas, and calculates the frequency appearance of a character pattern constituting the details of the circuit pattern for every small area. A part for determining the arrangement of character opening calculates a frequency when optional two character patterns are combined in the same small area throughout the circuit pattern, and determines the arrangement of character opening on a mask so that openings of character pattern having a high combination frequency may be mutually close to each other. A deflection order setting part determines an order for using a character opening for every small area so that a distance between the character openings on a mask to be used may become shortest.
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申请公布号 |
JP2001257145(A) |
申请公布日期 |
2001.09.21 |
申请号 |
JP20000065377 |
申请日期 |
2000.03.09 |
申请人 |
TOSHIBA CORP |
发明人 |
UMAGOE TOSHIYUKI;INENAMI RYOICHI |
分类号 |
G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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