| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily and efficiently manufacture an electro-optic device in which single crystal silicon is used as the semiconductor layer of a switching element in a driving circuit region and polysilicon is used as the semiconductor layer of a switching element in a display pixel region and to provide an electro-optic device with high quality. SOLUTION: In the method of manufacturing a TFT array substrate of a liquid crystal device, a single crystal silicon film 210 is formed on a substrate 110, and while a mask 211 is formed on the single crystal silicon film corresponding to the driving circuit region, silicon ions are injected into the single crystal silicon film corresponding to the display pixel region and heat treated. Thereby, in the display pixel region the single crystal silicon film 210c with injected silicon ions is converted into polysilicon to form a polysilicon film 210d. The single crystal silicon film 210 in the driving circuit region becomes a single crystal silicon film 210e with the grown crystal.</p> |
