| 摘要 |
PROBLEM TO BE SOLVED: To realize operations by a single power source and to attain the reduction of a chip size and the improvement of detecting accuracy. SOLUTION: A driving circuit for a power switching element is provided with a function for protecting a power MOS transistor Q1 in which the transistor Q1 is ON/OFF controlled to control the load current and when an abnormality detection signal is outputted from a monitoring circuit 4, the driving circuit controls a drive circuit 1 by using a control circuit 2 to shut down the transistor Q1 to protect the transistor Q1. The VDS of the transistor Q1 is converted to the voltage of GND reference by a level shift circuit 22. This level-shifted voltage VDS is compared with reference voltage VR2 by a comparator 23 and when VR2<VDS, it is judged that an excess current has been generated and the output of the comparator 23 is inverted. A control circuit 3 responds to this and controls the circuit 1 to shut down the transistor Q1.
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