发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable semiconductor device which has a resin layer and can prevent a defect such as a disconnection in a connected part caused by a thermal stress. SOLUTION: The semiconductor device is manufactured by printing resin having an elastic modulus of 0.2-3.0 Gpa, a glass transition temperature of 180 deg.C or more and a 5%-weight reducing temperature of 300 deg.C or more on a semiconductor wafer to form a plurality of resin layers ; forming a second wiring layer for electric conduction with an electrode of the wafer on the resin layer; printing the resin on the second wiring layer to form a plurality of protective layers for the second wiring layer; making a through-hole arriving at the second wiring layer in the protective layer of the second wiring layer; forming an external electrode terminal in the through-hole; and cutting the wafer into individual semiconductor devices.
申请公布号 JP2001257282(A) 申请公布日期 2001.09.21
申请号 JP20000071025 申请日期 2000.03.09
申请人 HITACHI CHEM CO LTD 发明人 TANAKA TOSHIAKI;YASUDA MASAAKI;MORISHITA YOSHII;NISHIZAWA HIROSHI;YANO YASUHIRO;KANEDA AIZO
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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