发明名称 |
Semiconductor device having resistive element |
摘要 |
A trench is formed in an n+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.
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申请公布号 |
US2001022385(A1) |
申请公布日期 |
2001.09.20 |
申请号 |
US20010804188 |
申请日期 |
2001.03.13 |
申请人 |
SAKAKIBARA JUN;YAMAGUCHI HITOSHI |
发明人 |
SAKAKIBARA JUN;YAMAGUCHI HITOSHI |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L29/10;H01L29/423;H01L29/78;H01L29/8605;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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