| 摘要 |
A silicon supporting substrate (11) has n+1 layers (12) of silicon oxide film and n layers (1,2...n) of piezoelectric thin film formed on them, while a hole (11a) is formed in the substrate. The thin films, made of zinc oxide, lead titanate zirconate etc., alternate with the insulating films (12). When alternating current voltage is applied independently to the adjacent piezoelectric thin films with the same phase, a higher order vibration mode is executed. Independent claims are included for a combination of a piezoelectric resonator and a voltage source and for a method of exciting a piezoelectric resonator in a thickness extensional vibration mode. |
