EPITAXIAL SILICON WAFERS SUBSTANTIALLY FREE OF GROWN-IN DEFECTS
摘要
<p>The present invention is directed to a set of epitaxial silicon wafers assembled in a wafer cassette, boat or other wafer carrier. Each wafer comprises a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated silicon self-interstitial defects on the substrate surface upon which the epitaxial layer is deposited.</p>
申请公布号
EP1133590(A1)
申请公布日期
2001.09.19
申请号
EP19990956561
申请日期
1999.10.13
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
MULE&apos,STAGNO, LUCIANO;FEI, LU;HOLZER, JOSEPH, C.;KORB, HAROLD, W.;FALSTER, ROBERT, J.