| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate where a single crystal semiconductor film that can be manufactured easily and is accurate is formed on an insulator substrate containing a glass substrate, a quartz substrate, or the like, and its manufacturing method. SOLUTION: A semiconductor substrate 10 is provided with a quartz substrate 1 and a single crystal silicon film 2a reformed and formed by such non-single crystal film 3 as an amorphous silicon film or the like on one main surface of the substrate 1. Reforming from the non-single crystal silicon film 3 to the single crystal silicon film 2a is made by first laminating a single crystal silicon substrate 11 covered with a silicon oxide film 12 and whose one portion is a single crystal silicon exposure part 11b, and the quartz substrate 1 where the non-single crystal silicon film 3 is formed on one main surface. Then, laser beams are applied to the boundary between the single crystal silicon exposure part 11b and the non-single crystal silicon film 3 for forming a seed crystal, and are successively applied to the traveling boundary, thus reforming all non-single crystal silicon films 3 to the single-crystal silicon film 2a. After that, single crystal silicon substrate 11 is removed.
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