发明名称 Page by page programmable flash memory
摘要 An integrated circuit memory includes a FLASH memory including a circuit for recording a word presented on its input without the possibility of recording simultaneously several words in parallel. The integrated circuit memory may include a buffer memory with a sufficient capacity to store a plurality of words, the output of which is coupled to the input of the FLASH memory. A circuit is also included for recording into the buffer memory a series of words to be recorded into the FLASH memory and recording into the FLASH memory the words first recorded into the buffer memory.
申请公布号 US2001021958(A1) 申请公布日期 2001.09.13
申请号 US20000737170 申请日期 2000.12.14
申请人 STMICROELECTRONICS S.A. 发明人 ZINK SEBASTIEN;LECONTE BRUNO;CAVALERI PAOLA
分类号 G11C16/10;(IPC1-7):G06F13/00;G06F12/00 主分类号 G11C16/10
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