| 摘要 |
<p>A first reactant gas is flowed (310) into a CVD reaction chamber (430) containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first precursor compounds, and the first precursor compound or compounds decompose in the CVD reaction chamber to deposit a coating containing metal atoms on the heated integrated circuit substrate. The coating is treated (312) by RTP. Thereafter, a second reactant gas is flowed (316) into a CVD reaction chamber (430) containing the heated substrate. The second reactant gas contains a second precursor compound or a plurality of second precursor compounds, which decompose in the CVD reaction chamber to deposit more metal atoms on the substrate. Heat for reaction and crystallization of the deposited metal atoms to form a thin film (124, 226, 528, 758, 728) of layered superlattice material is provided by heating the substrate during CVD deposition, as well as by selected rapid thermal processing ('RTP') and furnace annealing steps.</p> |
