ELECTRONIC DEVICE PACKAGING

摘要

A hermetically coated device (10) includes an integrated semiconductor circuit die (16), a first layer comprising an inorganic material, the first layer (300) enveloping the integrated circuit die (16), a second layer (400), the second layer (400) enveloping the integrated semiconductor circuit die (16). Formation of such device includes steps of providing an integrated semiconductor circuit die (16), applying a first layer (300) comprising an inorganic material, the first layer (300) enveloping integrated semiconductor circuit die (16), and applying a second layer (400), the second layer (400) enveloping the integrated semiconductor circuit die (16).