| 摘要 |
<p>PURPOSE: Provided is a composition for forming film, which is excellent in dielectric constant properties and mechanical properties as an interlayer insulating film in a semiconductor element, etc. and capable of forming a silica-based film. CONSTITUTION: The composition comprises (A) hydrolyzed condensate produced by hydrolysing and condensing at least silane compounds selected from a group consisting of a compound of formula(1):RaSi(OR')4-a, a compound of formula(2):Si(OR2)4 and a compound of formula(3):R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c in the presence of 0.2 mol of alkaline compound per 1 mole of the silane compound, and (B) organic solvent: wherein R denotes H, F or a monovalent organic group, R1 denotes a monovalent organic group, a denotes an integer of 1-2, R2 denotes a monovalent organic group, R3 to R6 are same or different and denote each a monovalent organic group, b and c are same or different and denote each an integer of 0-2, R7 denotes O, phenylene group or a group represented by -(CH2)n- (n is an integer of 1-6), and d denotes 0 or 1. The composition which applied to substrate, is heated to form film.</p> |
