METAL WIRING, METHOD FOR ITS MANUFACTURE, DISPLAY DEVICE USING THE SAME AND THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a structure of metal wiring wherein blistering does not occur on the surface of a Cu/Ni film or Cu/Au/Ni film even if Ni plating film thickness is reduced. SOLUTION: The metal wiring 1 is of Cu/Au/Ni film structure formed by depositing an Au film 13 and a Cu film 15 on an Ni film 12 formed by electroless plating in this order by electroless plating. In this structure the phosphorus content x of the Ni film 12 satisfies the condition expressed as 10 wt.%<=x<=15 wt.%. It has been found from experiments that the Ni film 12 with the phosphorus content x of 10 to 15 wt.%, so-called the high- phosphorus-content Ni film 12 makes a closely-packed, smooth film under the condition of the film thickness not less than 0.1μm.