发明名称 METHOD AND APPARATUS FOR EXTRACTING HIGH-FREQUENCY SEMICONDUCTOR DEVICE MODEL PARAMETER, AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To prevent deterioration of a large-signal nonlinear circuit analysis accuracy of a high frequency circuit when a model parameter is determined so that an experimental expression coincides with the I-V characteristic of a DC. SOLUTION: On the basis of S parameter measurement by a high frequency network analyzer 16, a measurement characteristic calculator 6 finds a mutual conductance 'gm' and output conductance 'go' of a semiconductor device, integrates these conductances to generate a measurement I-V characteristic. The calculator also computes differentiated values of the conductances. A model characteristic calculator 8 generates an I-V characteristic based on model parameters, differentiates the I-V characteristic to find each conductance and a differentiated value thereof. A comparison calculator 10 judges whether or not the I-V characteristic, 'gm', 'go' and differentiated values thereof based on measured values obtained by the measurement characteristic calculator 6 coincide with corresponding characteristic values calculated by the model characteristic calculator 8. A model parameter generator 12 performs parameter fitting so that these values coincide with the characteristic values.
申请公布号 JP2001244452(A) 申请公布日期 2001.09.07
申请号 JP20000050677 申请日期 2000.02.28
申请人 JAPAN RADIO CO LTD 发明人 FUJII KOHEI
分类号 H01L29/00;G06F17/50;(IPC1-7):H01L29/00 主分类号 H01L29/00
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