| 摘要 |
PURPOSE: A gate dielectric with self forming diffusion barrier is provided to achieve the dopant diffusion with thermally stable and resistant. CONSTITUTION: A gate dielectric comprising forming a dielectric layer(12) on an area of a silicon substrate(10), implanting nitrogen atoms into the dielectric layer(12), forming a conductive layer of polysilicon over the dielectric layer(12), annealing the dielectric layer(12) to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer(12) and the silicon substrate and the polysilicon layers, and, forming a gate structure in the polysilicon layer(16) and source/drain regions(26) in the silicon substrate(10), the source/drain regions(26) aligned with the gate structure.
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