发明名称 PROCESS FOR FORMING A MICROCRYSTALLINE SILICON SERIES THIN FILM AND APPARATUS SUITABLE FOR PRACTICING SAID PROCESS
摘要 A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in said vacuum chamber and while transporting said long substrate in a longitudinal direction, causing glow discharge between said electrode and said long substrate to deposit said microcrystalline silicon series thin film on said long substrate, wherein a plurality of bar-like shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said long substrate and their intervals to said long substrate are all or partially differed, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing said microcrystalline series thin film on said long substrate. An apparatus suitable for practicing said process.
申请公布号 US2001019746(A1) 申请公布日期 2001.09.06
申请号 US19990261499 申请日期 1999.03.03
申请人 HIGASHIKAWA MAKOTO;SANO MASAFUMI 发明人 HIGASHIKAWA MAKOTO;SANO MASAFUMI
分类号 H01L31/04;C23C16/24;C23C16/509;C23C16/54;(IPC1-7):C23C16/24;C23C16/00 主分类号 H01L31/04
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