发明名称 |
PROCESS FOR FORMING A MICROCRYSTALLINE SILICON SERIES THIN FILM AND APPARATUS SUITABLE FOR PRACTICING SAID PROCESS |
摘要 |
A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in said vacuum chamber and while transporting said long substrate in a longitudinal direction, causing glow discharge between said electrode and said long substrate to deposit said microcrystalline silicon series thin film on said long substrate, wherein a plurality of bar-like shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said long substrate and their intervals to said long substrate are all or partially differed, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing said microcrystalline series thin film on said long substrate. An apparatus suitable for practicing said process.
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申请公布号 |
US2001019746(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US19990261499 |
申请日期 |
1999.03.03 |
申请人 |
HIGASHIKAWA MAKOTO;SANO MASAFUMI |
发明人 |
HIGASHIKAWA MAKOTO;SANO MASAFUMI |
分类号 |
H01L31/04;C23C16/24;C23C16/509;C23C16/54;(IPC1-7):C23C16/24;C23C16/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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