Semiconductor device with capacitive element and method of forming the same

摘要

The present invention provides a semiconductor device having at least a multilevel metal interconnection structure, at least a capacitor which lies over the multilevel metal interconnection structure, and an inter-layer insulator under the capacitor and over the multilevel metal interconnection structure for isolating the multilevel metal interconnection structure form the capacitor, wherein at least an anti-oxidizing film preventing penetration of oxygen is provided in the inter-layer insulator, so that the anti-oxidizing film lies covering the multilevel metal interconnection structure and under the capacitor.