| 摘要 |
<p>The invention relates to a method and to a related reactor for applying a SACVD deposition technique in the fabrication of semiconductor integrated circuits. The method comprises at least one step of depositing a layer of dielectric material, carried out inside a deposition reactor (1) which is fed by a stream of reaction gas. Advantageously, a remote plasma of reaction oxygen (O2) is employed which is subjected to microwave within the gas feed conduit (3) to the reactor (1), in order to generate sufficient free radicals of the gas, sufficient to initiate the deposition reaction. <IMAGE></p> |
